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GeneSiC 的 G3R™, 提供優(yōu)化的低電感分立封裝 (貼片和通孔), 經(jīng)過(guò)優(yōu)化,可在所有工作條件和超快開關(guān)速度下以最低功耗運(yùn)行. 與當(dāng)代 SiC MOSFET 相比,這些器件具有明顯更好的性能水平....
經(jīng)過(guò)十多年為業(yè)界提供高性能、高品質(zhì)的碳化硅整流器, GeneSiC很高興發(fā)布我們的第 5 代 SiC 肖特基 MPS™ (合并-PiN-肖特基) 在各個(gè)方面提供行業(yè)領(lǐng)先性能的二極管,以滿足服務(wù)器/電信電源和電池充電器等應(yīng)用中的高效率和功率密度目標(biāo)....
GeneSiC這些G3R™SiC MOSFET, 提供優(yōu)化的低電感分立封裝 (貼片和通孔), 針對(duì)要求提高效率水平和超快開關(guān)速度的電源系統(tǒng)設(shè)計(jì)進(jìn)行了高度優(yōu)化....
GeneSiC半導(dǎo)體今天宣布推出下一代3300V和1700V1000mΩSiC MOSFET – G2R1000MT17J, G2R1000MT17D, 和G2R1000MT33J....
GeneSiC的創(chuàng)新特色是SiC雙注入金屬氧化物半導(dǎo)體 (場(chǎng)效應(yīng)管) 結(jié)勢(shì)壘肖特基器件結(jié)構(gòu) (JBS) 整流器集成到SiC DMOSFET單元電池中. 這種領(lǐng)先的功率器件可用于下一代功率轉(zhuǎn)換系統(tǒng)中的各種功率轉(zhuǎn)換電路中. GeneSiC的創(chuàng)新特色是SiC雙注入金屬氧化物半導(dǎo)體 (場(chǎng)效應(yīng)管) 結(jié)勢(shì)壘肖特基器件結(jié)構(gòu)...
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